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1

Device Modeling for Understanding AlGaN/GaN HEMT Gate-Lag

Ramanan, Narayanan, Lee, Bongmook, Misra, Veena

Journal:

IEEE Transactions on Electron Devices

Year:

2014

Language:

english

File:

PDF, 2.51 MB

english, 2014

2

Threshold voltage stability comparison in AlGaN/GaN FLASH MOS-HFETs utilizing charge trap or floating gate charge storage

Casey Kirkpatrick, Bongmook Lee, YoungHwan Choi, Alex Huang, Veena Misra

Journal:

physica status solidi (c)

Year:

2012

Language:

english

File:

PDF, 629 KB

english, 2012

3

Properties of atomic layer deposited dielectrics for AlGaN/GaN device passivation

Ramanan, Narayanan, Lee, Bongmook, Kirkpatrick, Casey, Suri, Rahul, Misra, Veena

Journal:

Semiconductor Science and Technology

Year:

2013

Language:

english

File:

PDF, 958 KB

english, 2013

4

Electrical Characteristics of 10-kV 4H-SiC MPS Rectifiers with High Schottky Barrier Height

Jiang, Yifan, Sung, Woongje, Baliga, Jayant, Wang, Sizhen, Lee, Bongmook, Huang, Alex

Journal:

Journal of Electronic Materials

Year:

2017

Language:

english

File:

PDF, 1.06 MB

english, 2017

5

[IEEE 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Waikoloa, HI, USA (2014.6.15-2014.6.19)] 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - A novel methodology using pulsed-IV for interface or border traps characterization on AlGaN/GaN MOSHFETs

Ramanan, Narayanan, Lee, Bongmook, Misra, Veena

Year:

2014

Language:

english

File:

PDF, 901 KB

english, 2014

6

[IEEE 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Waikoloa, HI, USA (2014.6.15-2014.6.19)] 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - High voltage AlGaN/GaN HFET employing low taper angle field-plate for stable forward blocking capability

Ji, In-Hwan, Lee, Bongmook, Wang, Sizhen, Misra, Veena, Huang, Alex Q., Choi, Young-Hwan

Year:

2014

Language:

english

File:

PDF, 1.02 MB

english, 2014

7

Flexible Technologies for Self-Powered Wearable Health and Environmental Sensing

Misra, Veena, Bozkurt, Alper, Calhoun, Benton, Jackson, Thomas, Jur, Jesse, Lach, John, Lee, Bongmook, Muth, John, Oralkan, Omer, Ozturk, Mehmet, Trolier-McKinstry, Susan, Vashaee, Daryoosh, Wentzloff

Journal:

Proceedings of the IEEE

Year:

2015

Language:

english

File:

PDF, 1.55 MB

english, 2015

8

ALD gate dielectrics for improved threshold voltage stability in AlGaN/GaN MOS-HFETs for power applications

Ramanan, Narayanan, Lee, Bongmook, Misra, Veena

Journal:

Semiconductor Science and Technology

Year:

2015

Language:

english

File:

PDF, 1.61 MB

english, 2015

9

Low Power Wearable Systems for Continuous Monitoring of Environment and Health for Chronic Respiratory Disease

Dieffenderfer, James, Goodell, Henry, Mills, Steven, McKnight, Michael, Yao, Shanshan, Lin, Feiyan, Beppler, Eric, Bent, Brinnae, Lee, Bongmook, Misra, Veena, Zhu, Yong, Oralkan, Omer, Strohmaier, Jas

Journal:

IEEE Journal of Biomedical and Health Informatics

Year:

2016

Language:

english

File:

PDF, 1.38 MB

english, 2016

10

Improvement of Threshold Voltage Reliability of 4H-SiC MOSFETs with Lanthanum Silicate by High Temperature Forming Gas Anneal

Yang, Xiangyu, Lee, Bongmook, Misra, Veena

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 444 KB

english, 2017

11

Performance improvement of AlGaN/GaN high electron mobility transistors with atomic layer deposition (ALD) of SiO2 and HfAlO dielectrics

Casey Kirkpatrick, Bongmook Lee, Xiangyu Yang, Veena Misra

Journal:

physica status solidi (c)

Year:

2011

Language:

english

File:

PDF, 340 KB

english, 2011

12

Normally-off AlGaN/GaN MOSHFET using ALD SiO2 tunnel dielectric and ALD HfO2 charge storage layer for power device application

Bongmook Lee, Casey Kirkpatrick, Young-hwan Choi, Xiangyu Yang, Alex Q. Huang, Veena Misra

Journal:

physica status solidi (c)

Year:

2012

Language:

english

File:

PDF, 233 KB

english, 2012

13

Investigation of the Origin of Modulation by Capping Layer Approaches for NMOS Application: Role of La Diffusion, Effect of Host High- Layer, and Interface Properties

Bongmook Lee, Novak, S.R., Lichtenwalner, D.J., Xiangyu Yang, Misra, V.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 1.95 MB

english, 2011

14

Impact of AlTaO Dielectric Capping on Device Performance and Reliability for Advanced Metal Gate/High- PMOS Application

Bongmook Lee, Lichtenwalner, D.J., Novak, S.R., Misra, V.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 1.43 MB

english, 2011

15

Atomic Layer Deposition of $\hbox{SiO}_{2}$ for AlGaN/GaN MOS-HFETs

Kirkpatrick, Casey J., Lee, Bongmook, Suri, Rahul, Yang, Xiangyu, Misra, Veena

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 345 KB

english, 2012

16

Dual Floating Gate Unified Memory MOSFET With Simultaneous Dynamic and Non-Volatile Operation

Sarkar, Biplab, Ramanan, Narayanan, Jayanti, Srikant, Spigna, Neil Di, Lee, Bongmook, Franzon, Paul, Misra, Veena

Journal:

IEEE Electron Device Letters

Year:

2014

Language:

english

File:

PDF, 469 KB

english, 2014

17

[IEEE 2013 IEEE Sensors - Baltimore, MD, USA (2013.11.3-2013.11.6)] 2013 IEEE SENSORS - Atomic Layer Deposited TiO2 thin films for environmental gas sensing

Mills, Steven, Lee, Bongmook, Misra, Veena

Year:

2013

Language:

english

File:

PDF, 1015 KB

english, 2013

18

Influence of oxygen diffusion through capping layers of low work function metal gate electrodes

Bei Chen, R. Jha, H. Lazar, N. Biswas, Jaehoon Lee, Bongmook Lee, L. Wielunski, E. Garfunkel, V. Misra

Journal:

IEEE Electron Device Letters

Year:

2006

Language:

english

File:

PDF, 154 KB

english, 2006

19

Characteristics of Ni/Gd FUSI for NMOS Gate Electrode Applications

Bongmook Lee,, Biswas, N., Novak, S.R., Misra, V.

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 203 KB

english, 2007

20

[IEEE 2013 13th Non-Volatile Memory Technology Symposium (NVMTS) - Minneapolis, MN, USA (2013.8.12-2013.8.14)] 2013 13th Non-Volatile Memory Technology Symposium (NVMTS) - Investigation of intermediate dielectric for dual floating gate MOSFET

Sarkar, Biplab, Jayanti, Srikant, Di Spigna, Neil, Lee, Bongmook, Misra, Veena, Franzon, Paul

Year:

2013

Language:

english

File:

PDF, 505 KB

english, 2013

21

A molecular memory device formed by HfO[sub 2] encapsulation of redox-active molecules

Chen, Zhong, Lee, Bongmook, Sarkar, Smita, Gowda, Srivardhan, Misra, Veena

Journal:

Applied Physics Letters

Year:

2007

Language:

english

File:

PDF, 392 KB

english, 2007

22

Flash MOS-HFET operational stability for power converter circuits

Kirkpatrick, Casey, Lee, Bongmook, Ramanan, Narayanan, Misra, Veena

Journal:

Physica status solidi

Year:

2014

Language:

english

File:

PDF, 353 KB

english, 2014

23

[IEEE 2010 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2010.12.6-2010.12.8)] 2010 International Electron Devices Meeting - Normally-off AlGaN/GaN-on-Si MOSHFETs with TaN floating gates and ALD SiO2 tunnel dielectrics

Lee, Bongmook, Kirkpatrick, Casey, Xiangyu Yang,, Jayanti, Srikant, Suri, Rahul, Roberts, John, Misra, Veena

Year:

2010

Language:

english

File:

PDF, 987 KB

english, 2010

24

[IEEE 2011 International Semiconductor Device Research Symposium (ISDRS) - College Park, MD, USA (2011.12.7-2011.12.9)] 2011 International Semiconductor Device Research Symposium (ISDRS) - Performance enhancement of AlGaN/GaN metal-oxide-semiconductor heterojunction field-effect transistor (MOSHFET) with atomic layer deposition (ALD) of high-k HfAlO gate dielectric layer

Lee, Bongmook, Choi, Young-Hwan, Kirkpatrick, Casey, Huang, Alex Q., Misra, Veena

Year:

2011

Language:

english

File:

PDF, 377 KB

english, 2011

25

[IEEE IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Tempe, Arizon, USA (Dec. 5, 2005)] IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Dependence of pmos metal work functions on surface conditions of high-k gate dielectrics

Jha, R., Bongmook Lee,, Bei Chen,, Novak, S., Majhi, P., Misra, V.

Year:

2005

Language:

english

File:

PDF, 515 KB

english, 2005

26

Platinum Nanoparticles Grown by Atomic Layer Deposition for Charge Storage Memory Applications

Novak, Steven, Lee, Bongmook, Yang, Xiangyu, Misra, Veena

Journal:

Journal of The Electrochemical Society

Year:

2010

Language:

english

File:

PDF, 836 KB

english, 2010

27

[IEEE 2014 IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Knoxville, TN, USA (2014.10.13-2014.10.15)] 2014 IEEE Workshop on Wide Bandgap Power Devices and Applications - Design and fabrication of high current AlGaN/GaN HFET for Gen III solid state transformer

Ji, In-Hwan, Wang, Sizhen, Lee, Bongmook, Ke, Haotao, Misra, Veena, Huang, Alex Q.

Year:

2014

Language:

english

File:

PDF, 2.77 MB

english, 2014

28

[ECS 210th ECS Meeting - Cancun, Mexico (October 29-November 3, 2006)] ECS Transactions - Feasibility of Dipole Based Work Function Tuning for Sub-1nm EOT Metal Gated High-K Stacks

Misra, Veena, Jha, Rashmi, Chen, Bei, Lee, Jaehoon, Lee, Bongmook

Year:

2006

Language:

english

File:

PDF, 352 KB

english, 2006

29

Ferroelectric and magnetic properties of multiferroic BiFeO3-La0.7Sr0.3MnO3 heterostructures integrated with Si (100)

Singamaneni, Srinivasa Rao, Prater, J. T., Nori, S., Kumar, D., Lee, Bongmook, Misra, V., Narayan, J.

Journal:

Journal of Applied Physics

Year:

2015

Language:

english

File:

PDF, 784 KB

english, 2015

30

ECS Transactions [ECS 220th ECS Meeting - Boston, MA (October 9 - October 14, 2011)] - Impact of ALD Gate Dielectrics (SiO

Lee, Bongmook, Kirkpatrick, Casey, Choi, Young-Hwan, Yang, Xiangyu, Wang, Yalin, Yang, Xingchen, Huang, Alex, Misra, Veena

Year:

2011

Language:

english

File:

PDF, 554 KB

english, 2011

31

[ECS 210th ECS Meeting - Cancun, Mexico (October 29-November 3, 2006)] ECS Transactions - On the Issue of Work Function Tuning of Nickel Silicide Gates

Biswas, Nivedita, Lee, Bongmook, Misra, Veena

Year:

2006

Language:

english

File:

PDF, 204 KB

english, 2006

32

Comparison of Methods for Accurate Characterization of Interface Traps in GaN MOS-HFET Devices

Ramanan, Narayanan, Lee, Bongmook, Misra, Veena

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 2.01 MB

english, 2015

33

[ECS 208th ECS Meeting - Los Angeles, California (October 16-October 21, 2005)] ECS Transactions - Workfunction Tuning of Nickel Silicide by Varying Nickel and Silicon Composition

Biswas, Nivedita, Novak, Steven, Lee, Bongmook, Chen, Bei, Misra, Veena

Year:

2006

Language:

english

File:

PDF, 109 KB

english, 2006

34

[ECS 213th ECS Meeting - Phoenix, AZ (May 18 - May 23, 2008)] ECS Transactions - Investigation of VT Shift Mechanism of High-K Dielectrics caused by Lanthanum Capping for NMOS and Tantalum Capping for PMOS Devices

Lee, Bongmook, Lichtenwalner, Daniel, Agustin, Melody, Arghavani, Reza, Tang, Xianmin, Gandikota, Srinivas, Ku, Victor, Misra, Veena

Year:

2008

Language:

english

File:

PDF, 1.03 MB

english, 2008

35

High Mobility 4H-SiC Lateral MOSFETs Using Lanthanum Silicate and Atomic Layer Deposited SiO2

Yang, Xiangyu, Lee, Bongmook, Misra, Veena

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 1.24 MB

english, 2015

36

[IEEE 2014 IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Knoxville, TN, USA (2014.10.13-2014.10.15)] 2014 IEEE Workshop on Wide Bandgap Power Devices and Applications - Effect of post deposition annealing for high mobility 4H-SiC MOSFET utilizing lanthanum silicate and atomic layer deposited SiO2

Yang, Xiangyu, Lee, Bongmook, Misra, Veena

Year:

2014

Language:

english

File:

PDF, 1.78 MB

english, 2014

37

The Role of Rare Earth Metals on Effective Work Function Modulation of Nickel Fully-Silicided Gate/High-$k$ Dielectric Stacks for n-Channel Metal Oxide Semiconductor Device Applications

Lee, Bongmook, Novak, Steven R., Biswas, Nivedita, Misra, Veena

Journal:

Japanese Journal of Applied Physics

Year:

2012

Language:

english

File:

PDF, 648 KB

english, 2012

38

Accurate characterization and understanding of interface trap density trends between atomic layer deposited dielectrics and AlGaN/GaN with bonding constraint theory

Ramanan, Narayanan, Lee, Bongmook, Misra, Veena

Journal:

Applied Physics Letters

Year:

2015

Language:

english

File:

PDF, 921 KB

english, 2015

39

[IEEE 2015 73rd Annual Device Research Conference (DRC) - Columbus, OH, USA (2015.6.21-2015.6.24)] 2015 73rd Annual Device Research Conference (DRC) - Understanding the influence of Ea and band-offset toward the conductance modulation in Al2O3 and HfO2 synaptic RRAM

Sarkar, Biplab, Lee, Bongmook, Misra, Veena

Year:

2015

Language:

english

File:

PDF, 706 KB

english, 2015

40

Application of AlGaN/GaN Heterostructures for Ultra-Low Power Nitrogen Dioxide Sensing

Lim, Michael, Mills, Steven, Lee, Bongmook, Misra, Veena

Journal:

ECS Journal of Solid State Science and Technology

Year:

2015

Language:

english

File:

PDF, 551 KB

english, 2015

41

Understanding the gradual reset in Pt/Al 2 O 3 /Ni RRAM for synaptic applications

Sarkar, Biplab, Lee, Bongmook, Misra, Veena

Journal:

Semiconductor Science and Technology

Year:

2015

Language:

english

File:

PDF, 531 KB

english, 2015

42

Investigation of Lanthanum Silicate Conditions on 4H-SiC MOSFET Characteristics

Yang, Xiangyu, Lee, Bongmook, Misra, Veena

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 907 KB

english, 2015

43

Atomic Layer Deposition of SnO 2 for Selective Room Temperature Low ppb Level O 3 Sensing

Mills, Steven, Lim, Michael, Lee, Bongmook, Misra, Veena

Journal:

ECS Journal of Solid State Science and Technology

Year:

2015

Language:

english

File:

PDF, 638 KB

english, 2015

44

[IEEE 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Blacksburg, VA, USA (2015.11.2-2015.11.4)] 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - A new AlGaN/GaN power HFET employing partial deep trench drain structure for high voltage application

Ji, In-Hwan, Lee, Bongmook, Wang, Sizhen, Misra, Veena, Huang, Alex Q.

Year:

2015

Language:

english

File:

PDF, 692 KB

english, 2015

45

Physical understanding of trends in current collapse with atomic layer deposited dielectrics in AlGaN/GaN MOS heterojunction FETs

Ramanan, Narayanan, Lee, Bongmook, Misra, Veena

Journal:

Semiconductor Science and Technology

Year:

2016

Language:

english

File:

PDF, 636 KB

english, 2016

46

Memristive behavior in BaTiO3/La0.7Sr0.3MnO3 heterostructures integrated with semiconductors

Singamaneni, Srinivasa Rao, Prater, John, Lee, Bongmook, Misra, Veena, Narayan, Jay

Journal:

Year:

2016

Language:

english

File:

PDF, 287 KB

english, 2016

47

[IEEE 2015 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2015.12.7-2015.12.9)] 2015 IEEE International Electron Devices Meeting (IEDM) - Ultra-low power sensing platform for personal health and personal environmental monitoring

Misra, Veena, Lee, Bongmook, Manickam, Pandiaraj, Lim, Michael, Pasha, Syed Khalid, Mills, Steven, Bhansali, Shekhar

Year:

2015

Language:

english

File:

PDF, 944 KB

english, 2015

48

Electrical Characteristics of SiO 2 Deposited by Atomic Layer Deposition on 4H–SiC After Nitrous Oxide Anneal

Yang, Xiangyu, Lee, Bongmook, Misra, Veena

Journal:

IEEE Transactions on Electron Devices

Year:

2016

Language:

english

File:

PDF, 871 KB

english, 2016

49

[IEEE 2016 IEEE SENSORS - Orlando, FL, USA (2016.10.30-2016.11.3)] 2016 IEEE SENSORS - Room temperature sensing of VOCs by atomic layer deposition of metal oxide

Tanneeru, Akhilesh, Mills, Steven, Lim, Michael, Mahmud, Marzana M., Dieffenderfer, James, Bozkurt, Alper, Nagle, Troy, Lee, Bongmook, Misra, Veena

Year:

2016

Language:

english

File:

PDF, 394 KB

english, 2016

50

[IEEE 2016 IEEE SENSORS - Orlando, FL, USA (2016.10.30-2016.11.3)] 2016 IEEE SENSORS - Metal oxide gas sensing characterization by low frequency noise spectroscopy

Lim, Michael, Malhotra, Abhishek, Mills, Steven, Muth, John, Lee, Bongmook, Misra, Veena

Year:

2016

Language:

english

File:

PDF, 334 KB

english, 2016